Fabrication of all-refractoryNb/Al–AlOx–Tisuperconducting tunnel junctions using selective titanium etching process (STEP) is described. Results including anodization properties of Ti, and junction’sI–Vcharacteristics and subgap currents measured in the temperature range of 0.4–9.2 K are presented. The junctions show fairly high quality with respect to their stability and reproducibility. Possible utilization of these junctions as superconductor–insulator–normal metal type devices operating around 100 mK and above for ultrasensitive microbolometer and electronic microrefrigerator applications is discussed. ©1998 American Institute of Physics.