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The magnitude and significance of proximity effects in electron image projector defined layers

 

作者: K. H. Nicholas,   R. A. Ford,   H. E. Brockman,   I. J. Stemp,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1983）
卷期: Volume 1, issue 4  

页码: 1020-1022

 

ISSN:0734-211X

 

年代: 1983

 

DOI:10.1116/1.582666

 

出版商: American Vacuum Society

 

关键词: integrated circuits;fabrication;distortion;proximity effect;electron beams;images;resolution;focusing;electron diffraction;lithography;backscattering;secondary emission

 

数据来源: AIP

 

摘要:

Electron image projection is an attractive technique for making submicron integrated circuits (IC) but long and short range proximity effects cause some pattern distortion. Long range proximity effects have now been measured and the significance of long and short range effects to IC fabrication assessed. Long range proximity exposure effects due to re‐entrant electrons are sufficiently uniform for local corrections to be unnecessary. With automatic proximity correction IC patterns could be scaled down to below 0.5 μm (1 μm pitch) even with single level resist and 20 keV electrons.

 

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