Characteristics of an avalanche phototransistor fabricated on a Si surface
作者:
C. W. Chen,
T. K. Gustafson,
期刊:
Applied Physics Letters
(AIP Available online 1981)
卷期:
Volume 39,
issue 2
页码: 161-163
ISSN:0003-6951
年代: 1981
DOI:10.1063/1.92647
出版商: AIP
数据来源: AIP
摘要:
A laser‐activated avalanche transistor compatible with planar processing has been devised. TheI‐Vcharacteristics display current‐controlled negative differential resistance similar to a bidirectional triggering diode. Capability as an edge detector or as a comb generator was demonstrated. An avalanche current gain of 24 carriers/photon with a 20‐V bias was observed when the transistor was used as an optical pulse detector.
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