Diffusion and electrical properties of silicon‐doped gallium arsenide
作者:
Mark E. Greiner,
James F. Gibbons,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 57,
issue 12
页码: 5181-5187
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.335253
出版商: AIP
数据来源: AIP
摘要:
The amphoteric nature of silicon in gallium arsenide is used to develop diffusion and electrical compensation mechanisms. The diffusion mechanism is based on the formation and diffusion of nearest‐neighbor donor‐acceptor pairs. General solutions are presented that predict abrupt diffusion fronts for a wide range of pairing conditions. Experiments support the application of this mechanism to Si diffusion in GaAs at high concentrations. A compensation mechanism for amphoteric dopants is developed as well. The compensation process is driven primarily by the free‐electron concentration. Nearly complete compensation is predicted for large dopant concentrations.
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