EXPERIMENTAL EVIDENCE FOR INTERSTITIAL In AND Tl IN ION‐IMPLANTED SILICON
作者:
J. A. Davies,
L. Eriksson,
J. W. Mayer,
期刊:
Applied Physics Letters
(AIP Available online 1968)
卷期:
Volume 12,
issue 8
页码: 255-256
ISSN:0003-6951
年代: 1968
DOI:10.1063/1.1651980
出版商: AIP
数据来源: AIP
摘要:
Using the channeling technique for locating foreign atoms in crystals, we have obtained direct experimental evidence of an irreversible motion of In and Tl atoms from substitutional to interstitial sites during the annealing of ion‐implanted silicon samples. Preliminary Hall measurements indicate that a corresponding transition fromp‐ ton‐type behavior also occurs in the same temperature region — viz. 525–575°C. Implantation conditions were 1–3 × 1014ions/cm2at 40 keV, with the substrate at 350–450°C to prevent lattice disorder from accumulating.
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