Extremely high electron mobility in a GaAs‐GaxIn1−xP heterostructure grown by metalorganic chemical vapor deposition
作者:
M. Razeghi,
M. Defour,
F. Omnes,
M. Dobers,
J. P. Vieren,
Y. Guldner,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 55,
issue 5
页码: 457-459
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.101851
出版商: AIP
数据来源: AIP
摘要:
On studying the magnetoresistivity of GaAs‐GaInP heterostructures grown by low‐pressure metalorganic chemical vapor deposition in magnetic fields up to 12 T and at liquid‐helium temperatures, we have observed extremely high electron mobilities. Using the persistent photoconductivity effect, by illumination with red light, we reached a mobility of 780 000 cm2/(V s) at an electron density of 4.1×1011cm−2. This high electron mobility is confirmed by cyclotron resonance measurements.
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