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p‐channel negative resistance field‐effect transistor

 

作者: M. E. Favaro,   L. M. Miller,   R. P. Bryan,   J. J. Alwan,   J. J. Coleman,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 56, issue 11  

页码: 1058-1060

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.102564

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We experimentally demonstrate the firstp‐channel negative resistance field‐effect transistor. Low‐temperature current‐voltage characteristics exhibit negative differential resistance in the drain circuit which is controlled by the substrate voltage. The negative differential resistance is attributed to the real‐space transfer of holes.

 

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