首页   按字顺浏览 期刊浏览 卷期浏览 Viable strained‐layer laser at &lgr;=1100 nm
Viable strained‐layer laser at &lgr;=1100 nm

 

作者: R. G. Waters,   P. K. York,   K. J. Beernink,   J. J. Coleman,  

 

期刊: Journal of Applied Physics  （AIP Available online 1990）
卷期: Volume 67, issue 2  

页码: 1132-1134

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.345758

 

出版商: AIP

 

数据来源: AIP

 

摘要:

In0.45Ga0.55As/GaAs/AlGaAs quantum well lasers emitting at 1100 nm have been fabricated and evaluated. These devices, which employ a highly strained quantum well region, exhibit low‐ (250 A/cm2) threshold current density and excellent reliability both of which were hitherto unattainable at such high In mole fractions.

 

点击下载:  PDF (324KB)



返 回