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On the rate of reactions of point defects very close to a crystal surface

 

作者: R.H. J. Fastenau,   A.Van Veen,   L.M. Caspers,   M.R. Ypma,  

 

期刊: Radiation Effects  （Taylor Available online 1982）
卷期: Volume 61, issue 3-4  

页码: 143-149

 

ISSN:0033-7579

 

年代: 1982

 

DOI:10.1080/00337578208229926

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The rate constant of the reaction of point defects with traps located very close to a crystal surface is studied using Monte Carlo and lattice relaxation simulations. Three effects due to the crystal surface are taken into account: the semi-infinite character of the random walk, changes in defect migration energies and changes in the trapping volume.

 

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