Growth of highly oriented tin oxide thin films by laser evaporation deposition
作者:
C. M. Dai,
C. S. Su,
D. S. Chuu,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 18
页码: 1879-1881
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103998
出版商: AIP
数据来源: AIP
摘要:
Conducting and transparent thin films of tin oxide were prepared by the laser evaporation of an undoped powder‐pressed polycrystalline tin oxide target onto unheated substrates. After characterizing these films, the results reveal that the films are highly oriented and with a grain size ∼0.2 &mgr;m. The nearly stoichiometric deposition of tin oxide films with deposition rates exceeding 24 A˚ per pulse was obtained by this method. The lowest resistivity obtained is 3.0×10−3&OHgr; cm. The visible transmittance (between 4000 and 7000 A˚) is above 75%.
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