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Growth of highly oriented tin oxide thin films by laser evaporation deposition

 

作者: C. M. Dai,   C. S. Su,   D. S. Chuu,  

 

期刊: Applied Physics Letters  (AIP Available online 1990)
卷期: Volume 57, issue 18  

页码: 1879-1881

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.103998

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Conducting and transparent thin films of tin oxide were prepared by the laser evaporation of an undoped powder‐pressed polycrystalline tin oxide target onto unheated substrates. After characterizing these films, the results reveal that the films are highly oriented and with a grain size ∼0.2 &mgr;m. The nearly stoichiometric deposition of tin oxide films with deposition rates exceeding 24 A˚ per pulse was obtained by this method. The lowest resistivity obtained is 3.0×10−3&OHgr; cm. The visible transmittance (between 4000 and 7000 A˚) is above 75%.

 

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