n‐i‐p‐idoping superlattices—metastable semiconductors with tunable properties
作者:
Gottfried H. Döhler,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1983)
卷期:
Volume 1,
issue 2
页码: 278-284
ISSN:0734-211X
年代: 1983
DOI:10.1116/1.582502
出版商: American Vacuum Society
关键词: metastable phases;p−n junctions;electronic structure;excitation;crystal doping;excited states;metastable states;tuning;design;analytical solution;carrier density;molecular beam epitaxy;metastable phases;holes
数据来源: AIP
摘要:
Semiconductors, modulated by periodicnandpdoping, possibly with intrinsic regions in‐between (‘‘n‐i‐p‐icrystals’’) represent a new class of semiconductors, because of their tunable electronic properties. A large number of intriguing phenomena, predicted by the theory, have been observed recently on GaAs doping superlattices grown by molecular beam epitaxy. In this paper we summarize the theory and experimental results with special emphasis on the aspects of the metastability of large deviations of the carrier concentrations from thermal equilibrium. Approximate analytical expressions for the lifetime enhancement, its dependence of the ‘‘design parameters’’ and on the state of excitation are derived. A brief outlook on possible extensions of the original concept is given.
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