C-V Hysteresis Observed in a Splay-Bend Transition: a Novel Method for the Evaluation of a Transition Speed
作者:
Shoichi Ishihara,
Katsuji Hattori,
Akihiko Sugimura,
期刊:
Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals
(Taylor Available online 2000)
卷期:
Volume 347,
issue 1
页码: 81-94
ISSN:1058-725X
年代: 2000
DOI:10.1080/10587250008024831
出版商: Taylor & Francis Group
关键词: liquid crystal;continuum theory;parallel structure;C-V hysteresis;bend transition
数据来源: Taylor
摘要:
The director distributions in thin nematic slabs with parallel structure have been calculated as a function of the applied electric field. They are different from the cells with the anti-parallel structure, in that three solutions exist in a specified voltage range which predict a transition of the director deformation from splay to bend configurations in the parallel structure. This splay-bend transition has been confirmed experimentally by a capacitance-voltage (C-V) hysteresis method. The C-V characteristics showed a hysteresis around the deformation transition and this magnitude corresponded to the facility of a splay-bend transition: a comparison of these hysteresis characteristics for different materials enables us to evaluate the splay-bend transition speed easily.
点击下载:
PDF (424KB)
返 回