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C-V Hysteresis Observed in a Splay-Bend Transition: a Novel Method for the Evaluation of a Transition Speed

 

作者: Shoichi Ishihara,   Katsuji Hattori,   Akihiko Sugimura,  

 

期刊: Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals  (Taylor Available online 2000)
卷期: Volume 347, issue 1  

页码: 81-94

 

ISSN:1058-725X

 

年代: 2000

 

DOI:10.1080/10587250008024831

 

出版商: Taylor & Francis Group

 

关键词: liquid crystal;continuum theory;parallel structure;C-V hysteresis;bend transition

 

数据来源: Taylor

 

摘要:

The director distributions in thin nematic slabs with parallel structure have been calculated as a function of the applied electric field. They are different from the cells with the anti-parallel structure, in that three solutions exist in a specified voltage range which predict a transition of the director deformation from splay to bend configurations in the parallel structure. This splay-bend transition has been confirmed experimentally by a capacitance-voltage (C-V) hysteresis method. The C-V characteristics showed a hysteresis around the deformation transition and this magnitude corresponded to the facility of a splay-bend transition: a comparison of these hysteresis characteristics for different materials enables us to evaluate the splay-bend transition speed easily.

 

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