High‐purity GaAs and Cr‐doped GaAs epitaxial layers by MBE
作者:
Hadis Morkoc¸,
A. Y. Cho,
期刊:
Journal of Applied Physics
(AIP Available online 1979)
卷期:
Volume 50,
issue 10
页码: 6413-6416
ISSN:0021-8979
年代: 1979
DOI:10.1063/1.325732
出版商: AIP
数据来源: AIP
摘要:
Liquid‐nitrogen‐temperature Hall mobilities of about 105 000 cm2/V sec have been achieved inn‐type epitaxial layers grown by molecular beam epitaxy (MBE). The Hall mobility of thep‐type epitaxial layers at 78 °K was about 8440 cm2/V sec. The net donor concentration and the net acceptor concentrations forn‐type andp‐type epitaxial layers were about 4×1014and 1×1014cm−3, respectively. The compensation ratio in then‐type epitaxial layers was about 0.4 as determined from the 78 °K electron mobility. Cr‐doped GaAs buffer layers for FET’s were grown in a substrate temperature range of 500–640 °C. Sheet resistances in excess of 109&OHgr;/ &laplac; were achieved when the substrate temperature during the growth was about 580 °C or higher. The amount of Cr that can be incorporated into the epitaxial layer showed a strong substrate temperature dependence.
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