Methacrylated silicone‐based negative photoresist for high resolution bilayer resist systems
作者:
Masao Morita,
Akinobu Tanaka,
Katsuhide Onose,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1986)
卷期:
Volume 4,
issue 1
页码: 414-417
ISSN:0734-211X
年代: 1986
DOI:10.1116/1.583345
出版商: American Vacuum Society
关键词: PHOTORESISTS;FABRICATION;BILAYERS;PHOTOSENSITIVITY;LITHOGRAPHY;ULTRAVIOLET RADIATION;RESOLUTION;SILICONES;ORGANIC COMPOUNDS;OXYGEN;ETCHING;INTEGRATED CIRCUITS;photoresist
数据来源: AIP
摘要:
We propose a new photoresist (MSNR: methacrylated silicone‐based negative resist) for high resolution bilayer resist systems. This photoresist shows high sensitivity to near‐UV light (350–450 nm),D0.5n=40 mJ/cm2, and excellent resistance to reactive ion etching with oxygen. A submicron (0.5 μm) pattern with a high aspect ratio can be easily fabricated with MSNR/AZ bilayer resist systems using near‐UV lithography.
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