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Methacrylated silicone‐based negative photoresist for high resolution bilayer resist systems

 

作者: Masao Morita,   Akinobu Tanaka,   Katsuhide Onose,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  (AIP Available online 1986)
卷期: Volume 4, issue 1  

页码: 414-417

 

ISSN:0734-211X

 

年代: 1986

 

DOI:10.1116/1.583345

 

出版商: American Vacuum Society

 

关键词: PHOTORESISTS;FABRICATION;BILAYERS;PHOTOSENSITIVITY;LITHOGRAPHY;ULTRAVIOLET RADIATION;RESOLUTION;SILICONES;ORGANIC COMPOUNDS;OXYGEN;ETCHING;INTEGRATED CIRCUITS;photoresist

 

数据来源: AIP

 

摘要:

We propose a new photoresist (MSNR: methacrylated silicone‐based negative resist) for high resolution bilayer resist systems. This photoresist shows high sensitivity to near‐UV light (350–450 nm),D0.5n=40 mJ/cm2, and excellent resistance to reactive ion etching with oxygen. A submicron (0.5 μm) pattern with a high aspect ratio can be easily fabricated with MSNR/AZ bilayer resist systems using near‐UV lithography.

 

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