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A new semiconductor superlattice

 

作者: G. A. Sai‐Halasz,   R. Tsu,   L. Esaki,  

 

期刊: Applied Physics Letters  (AIP Available online 1977)
卷期: Volume 30, issue 12  

页码: 651-653

 

ISSN:0003-6951

 

年代: 1977

 

DOI:10.1063/1.89273

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We treat theoretically, through the use of Bloch functions, a new semiconductor superlattice where the interaction of the conduction band in one host material with the valence band of the other host material plays an important role. The result indicates that this superlattice offers new intriguing features, realizable with the In1−xGaxAs‐GaSb1−yAsysystem. In addition, the tunneling probability is calculated across a barrier involving this system.

 

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