A new semiconductor superlattice
作者:
G. A. Sai‐Halasz,
R. Tsu,
L. Esaki,
期刊:
Applied Physics Letters
(AIP Available online 1977)
卷期:
Volume 30,
issue 12
页码: 651-653
ISSN:0003-6951
年代: 1977
DOI:10.1063/1.89273
出版商: AIP
数据来源: AIP
摘要:
We treat theoretically, through the use of Bloch functions, a new semiconductor superlattice where the interaction of the conduction band in one host material with the valence band of the other host material plays an important role. The result indicates that this superlattice offers new intriguing features, realizable with the In1−xGaxAs‐GaSb1−yAsysystem. In addition, the tunneling probability is calculated across a barrier involving this system.
点击下载:
PDF
(252KB)
返 回