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Temperature uniformity across an x‐ray mask membrane during resist baking

 

作者: D. J. Resnick,   K. D. Cummings,   W. A. Johnson,   H. T. H. Chen,   B. Choi,   R. L. Engelstad,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 6  

页码: 4033-4037

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587425

 

出版商: American Vacuum Society

 

关键词: LITHOGRAPHY;X RADIATION;MASKING;PHOTORESISTS;BAKING;TEMPERATURE DISTRIBUTION;COMPUTERIZED SIMULATION;TWO−DIMENSIONAL CALCULATIONS;FINITE ELEMENT METHOD

 

数据来源: AIP

 

摘要:

We have studied temperature uniformity during the post‐exposure bake process across a 40 mm diameter of an x‐ray mask membrane. Membrane temperature was determined by measuring line size as a function of position across the membrane. A two‐dimensional finite element model (FEM) was used to analyze the results and optimize the design of a new bake chuck. The 3σ variation across the diameter of the mask was reduced to 27 nm. The FEM was also used to examine issues associated with resist baking on the ARPA‐NIST X‐ray Mask Standard and the initial results are discussed.

 

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