Key role of oxygen at zinc oxide varistor grain boundaries
作者:
F. Stucki,
F. Greuter,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 5
页码: 446-448
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103661
出版商: AIP
数据来源: AIP
摘要:
The electrical transport properties of zinc oxide varistors are correlated with the chemistry of their grain boundaries. An adsorbed layer of bismuth, about 5 A˚ thick, is necessary to create potential barriers at the grain boundaries. The height of these potential barriers depends sensitively on the excess amount of oxygen (∼1 monolayer) present at the interfaces between grains. This oxygen enrichment is influenced by thermal processing and by electrical degradation.
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