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Single‐step lift‐off process using chlorobenzene soak on AZ4000 resists

 

作者: A. Fathimulla,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1985）
卷期: Volume 3, issue 1  

页码: 25-27

 

ISSN:0734-211X

 

年代: 1985

 

DOI:10.1116/1.583240

 

出版商: American Vacuum Society

 

关键词: PHOTORESISTS;THICKNESS;LITHOGRAPHY;VLSI;MULTILAYERS;FABRICATION;ULTRAVIOLET RADIATION;HARDNESS;ADHESION;CHEMICAL REACTIONS;ORGANIC CHLORINE COMPOUNDS;BENZENE;TEMPERATURE EFFECTS;PROCESSING

 

数据来源: AIP

 

摘要:

A single‐step lift‐off process using chlorobenzene soak on AZ4110 resist is described. The effects of the soak time and temperature on the thickness of the overhang is presented. This process provides thick overhang with vertical side walls, which are essential for the successful lift‐off. Finally, the effect of deep UV exposure on the lift‐off is discussed.

 

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