Biaxially aligned cerium oxide(CeO2)and yttria stabilized zirconia (YSZ) films were deposited on Ni-based metal (Hastelloy C276) substrates held at room temperature using ion beam assisted (IBAD) magnetron deposition with the ion beam directed at 55° to the normal of the film plane. In addition, we achieved, room-temperature epitaxial growth ofCeO2by bias sputtering to form biaxially alignedCeO2/YSZbilayers. The crystalline structure and in-plane orientation of films was investigated by x-ray diffraction techniques. Both the IBADCeO2and YSZ films, and theCeO2/YSZbilayers have a (111) pole in the ion beam direction. ©1997 American Institute of Physics.