p‐type GaSb and Ga0.8In0.2Sb layers were grown on GaAs substrates by the low pressure metalorganic vapor phase epitaxy technique, using silane as the dopant source. It was found that Si is a well behavedp‐type dopant in GaSb and Ga0.8In0.2Sb compounds. Secondary ion mass spectrometry measurements and Van der Pauw Hall measurements indicated that the compensation ratio (defined asNd/Na) of 2×1018cm−3dopedp‐type Ga0.8In0.2Sb layer is less than 0.25, whereas the compensation ratio is less than 0.1 for layers doped to <5×1017cm−3. Control ofp‐type doping level in the mid 1016cm−3–mid 1018cm−3range has been demonstrated. The effects of trimethylantimony mole fraction and the growth temperature on the Si incorporation behavior were also studied. ©1996 American Institute of Physics.