Conducting oxide electrodes for ferroelectric films
作者:
ChiK. Kwok,
DilipP. Vijay,
SeshuB. Desu,
NalinR. Parikh,
EdwardA. Hill,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1993)
卷期:
Volume 3,
issue 2
页码: 121-130
ISSN:1058-4587
年代: 1993
DOI:10.1080/10584589308216706
出版商: Taylor & Francis Group
关键词: conducting oxide electrodes;ferroelectric films;interdiffusion;fatigue
数据来源: Taylor
摘要:
Suitability of oxide electronic conductors [e.g. ruthenium oxide (RuOx) and indium-tin-oxide (ITO)] as contact metallization for ferroelectric films (e.g. PbZrxTi1−xO3) was investigated using techniques such as Rutherford backscattering spectrometry, x-ray diffraction and electron spectroscopy for chemical analysis. Thin films of RuOxand ITO were deposited on Si substrates by reactive sputtering. Either PbO or PZT (x = 0.53) films were deposited onto the conducting oxides and the specimens were annealed at various temperatures between 400°C and 700°C. Less intermixing was found in Si/RuOx/ PZT films when compared to Si/ITO/PZT under similar processing conditions. The ferroelectric properties of PZT films on RuOxelectrodes are compared to those on Pt electrodes. The PZT films show improved fatigue properties on RuOxelectrodes.
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