Formation of threading defects in GaN wurtzite films grown on nonisomorphic substrates
作者:
B. N. Sverdlov,
G. A. Martin,
H. Morkoc¸,
David J. Smith,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 14
页码: 2063-2065
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115079
出版商: AIP
数据来源: AIP
摘要:
Possible causes of a dense network of threading defects in epitaxial hexagonal GaN films grown on various substrates are discussed. We show that these defects originate at the substrate/film interface as the boundaries between differently stacked hexagonal domains, and are created by surface steps on substrates nonisomorphic with wurtzite GaN. We argue that these defects are inherent in the epitaxy of wurtzite films on nonisomorphic substrates. As a result, isomorphic substrates such as ZnO and GaN should be explored for wurtzite nitride growth. Possible effects of these defects on the properties of wurtzite nitrides are briefly discussed. ©1995 American Institute of Physics.
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