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Surface cleaning of copper by thermal and plasma treatment in reducing and inert ambients

 

作者: S. Hymes,   K. S. Kumar,   S. P. Murarka,   W. Wang,   W. A. Lanford,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1998）
卷期: Volume 16, issue 3  

页码: 1107-1109

 

ISSN:1071-1023

 

年代: 1998

 

DOI:10.1116/1.590017

 

出版商: American Vacuum Society

 

关键词: Cu

 

数据来源: AIP

 

摘要:

The effects of surface cleaning procedures on the subsequent reactivity of a pure copper thin film to silane was investigated.Ex situ, wet etching andin situdry, plasma etching using inert and reducing chemistries were employed. A few seconds low power (50 W) plasma exposure using a 3 vol% hydrogen in argon gas mixture was found to be the most beneficial technique for subsequent silicide formation by the silane exposure technique.

 

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