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Si‐doped GaAs/AlGaAs TJS laser by MBE

 

作者: K. Mitsunaga,   K. Fujiwara,   M. Nunoshita,   T. Nakayama,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1984）
卷期: Volume 2, issue 2  

页码: 256-258

 

ISSN:0734-211X

 

年代: 1984

 

DOI:10.1116/1.582798

 

出版商: American Vacuum Society

 

关键词: heterojunctions;annealing;gallium arsenides;molecular beam epitaxy;silicon;electrical properties;optical properties;threshold current;efficiency;fabrication;semiconductor lasers;(Al,Ga)As;GaAs;GaAs:Si

 

数据来源: AIP

 

摘要:

The effect of high temperature annealing on the properties of silicon‐doped GaAs/AlGaAs double heterostructure (DH) grown by molecular beam expitaxy (MBE) and its application to the fabrication of transverse junction stripe (TJS) lasers are reported. In spite of the amphoteric nature of Si, it was found that the high temperature annealing gave little influence on the electrical and optical quality of then‐type DH wafer. The TJS laser using Si‐doped GaAs/AlGaAs wafer has been oscillated cw at room temperature and exhibited low threshold current of 30 mA and high quantum efficiency of 60%.

 

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