Carrier separation effect in single‐layered‐compensated amorphous silicon
作者:
Jin Jang,
Sung Chul Kim,
Choochon Lee,
期刊:
Journal of Applied Physics
(AIP Available online 1988)
卷期:
Volume 64,
issue 11
页码: 6583-6585
ISSN:0021-8979
年代: 1988
DOI:10.1063/1.342035
出版商: AIP
数据来源: AIP
摘要:
In this paper we find the microscopic mechanism of persistent photoconductivity in doping‐modulated amorphous silicon superlattices is the same as that of compensated amorphous silicon. The carrier separation due to a built‐inn‐pjunction field can explain persistent photoconductivity in compensated amorphous silicon films. This new analysis is favored by experimental results on the persistent photoconductivity in compensated as well as in layered amorphous silicon films.
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