Punch-through diode as a power device
作者:
D.De Cogan,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1980)
卷期:
Volume 127,
issue 2
页码: 67-71
年代: 1980
DOI:10.1049/ip-i-1.1980.0012
出版商: IEE
数据来源: IET
摘要:
The punch-through diode is a bidirectional nonlinear device whose speed of response makes it suitable for the suppression of very fast transients. It is autoprotecting above a minimum current density. A simple model to estimate the influence of design parameters on thermal properties is presented, and discrepancies in existing criteria for maximum power-handling capability are discussed.
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