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Punch-through diode as a power device

 

作者: D.De Cogan,  

 

期刊: IEE Proceedings I (Solid-State and Electron Devices)  (IET Available online 1980)
卷期: Volume 127, issue 2  

页码: 67-71

 

年代: 1980

 

DOI:10.1049/ip-i-1.1980.0012

 

出版商: IEE

 

数据来源: IET

 

摘要:

The punch-through diode is a bidirectional nonlinear device whose speed of response makes it suitable for the suppression of very fast transients. It is autoprotecting above a minimum current density. A simple model to estimate the influence of design parameters on thermal properties is presented, and discrepancies in existing criteria for maximum power-handling capability are discussed.

 

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