Spiral growth and threading dislocations for molecular beam epitaxy of PbTe on BaF2(111) studied by scanning tunneling microscopy
作者:
G. Springholz,
A. Y. Ueta,
N. Frank,
G. Bauer,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 19
页码: 2822-2824
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.116855
出版商: AIP
数据来源: AIP
摘要:
Molecular beam epitaxy of PbTe on BaF2(111) is studied using UHV–scanning tunneling microscopy and atomic force microscopy. It is shown that PbTe growth is totally dominated by growth spirals formed around threading dislocations (TD) that originate from the growth on the 4.2% lattice‐mismatched substrate. Due to dislocation annihilation, the TD density rapidly decreases with layer thickness, which results in a dramatic increase of the electron mobilities in the layers. ©1996 American Institute of Physics.
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