In our previous work1a formula is presented for the rate constantof a radiationless electronic transition as a function of temperature τ for the Morse oscillator model. The formula was derived for the particular case of a sufficiently small parameter. In the above formulavo=v(T= o),Ais a constant, Δω = ω1- ω1where ω and to are vibrational frequencies in the higher and lower electronic states respectively, and α is a parameter of the Morse curvewhere re1is analogous to rebut refers to an excited electronic state. The expression for probabilityv(T) can be used to account for a number of experimental results on the temperature quenching of luminescence. However, the probability expression is valid for low values ofonly, and, besides, in practice the usual Arrhenius dependence of v(τ) is much more frequent than the one indicated by the expression. Therefore, it seems desirable to analyze the Morse oscillator model for a more or less arbitrary value of.