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GaAs/InP and InAs/InP heterojunction band offsets measured by x‐ray photoemission spectroscopy

 

作者: J. R. Waldrop,   R. W. Grant,   E. A. Kraut,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1989）
卷期: Volume 7, issue 4  

页码: 815-819

 

ISSN:0734-211X

 

年代: 1989

 

DOI:10.1116/1.584606

 

出版商: American Vacuum Society

 

关键词: INDIUM ARSENIDES;GALLIUM ARSENIDES;INDIUM PHOSPHIDES;HETEROJUNCTIONS;ELECTRONIC STRUCTURE;BAND THEORY;PHOTOEMISSION;PHOTOELECTRON SPECTROSCOPY;INTERFACES;MOLECULAR BEAM EPITAXY;ENERGY GAP;GaAs;InP;InAs

 

数据来源: AIP

 

摘要:

X‐ray photoemission spectroscopy (XPS) has been used to measure the unstrained valence‐band offset ΔEvfor thex=0 andx=1 end points of the InxGa1−xAs/InP (100) heterojunction system. Although the GaAs/InP (100) and InAs/InP (100) pseudomorphic interfaces investigated are strained because of lattice mismatch, the ΔEvvalues obtained by the XPS measurement analysis used are interpreted as characteristic of an unstrained interface. Strain‐free values of ΔEv(GaAs/InP)=0.19 eV and ΔEv(InAs/InP)=0.31 eV are reported. A linear interpolation of thesex=0 andx=1 unstrained values gives ΔEv(In0.53Ga0.47As/InP)=0.25 eV (ΔEc/ΔEv=58/42) for the lattice‐matched interface.

 

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