The effects of low‐dose ion implants with Si+, Ne+, and F+on the transient enhanced diffusion of B in silicon after annealing at 900 °C for 30 min have been investigated. Processing conditions such as implant dose (3.5×1013cm−2) and energy (30–60 keV) were chosen to simulate the lightly doped drain implant in a 0.35 &mgr;m complementary metal‐oxide‐semiconductor technology. An epitaxially grown B‐doping superlattice is used to extract directly depth profiles of average Si self‐interstitial concentration after processing. For Si+the transient enhanced diffusion of B increases with the energy of the implanted ion. Ne+implanted with the same energy as Si+causes more transient enhanced diffusion, while Ne+implanted with the same range as Si+causes slightly less. Implantation of F+enhances the B diffusivity considerably less than Si or Ne implantation. These effects were modeled using simulations of defect diffusion in the presence of traps. A trap concentration of (2.4±0.5)×1016cm−3gave good agreement in all situations except F+implantation, where (6.6±0.6)×1016cm−3traps were necessary. It is proposed that this is caused by additional traps for Si interstitials that are related to F+. ©1995 American Institute of Physics.