Secondary photon emission in plasma processing
作者:
Stanislav Moshkalyov,
Munemasa Machida,
Delton Campos,
Alexander Dulkin,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 18
页码: 2478-2480
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118862
出版商: AIP
数据来源: AIP
摘要:
Optical emission spectroscopy with high spatial resolution was applied for the study of plasma–material interaction in low-pressure reactive ion etching. Atomic and molecular emission by sputtered material has been found to be strongly localized near the surface. Excited particles are produced during sputtering by energetic ions, with the mechanisms being different for atoms and molecules. In atomic secondary photon emission, a cascade from highly excited levels is shown to be important. This method can be used as a probe during plasma processing. ©1997 American Institute of Physics.
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