Growth processes in the initial stage of Ge films on (811)Si surfaces by GeH4source molecular beam epitaxy
作者:
Y. Koide,
S. Zaima,
K. Itoh,
N. Ohshima,
Y. Yasuda,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 68,
issue 5
页码: 2164-2167
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.346573
出版商: AIP
数据来源: AIP
摘要:
The growth process in the initial stage of growth of Ge films on (811)Si substrate surfaces by GeH4source molecular‐beam epitaxy has been studied byinsitureflection high‐energy electron diffraction observation. It has been found that a strained film by the monolayer overgrowth mode is formed initially with an epitaxial relationship of the parallel orientation, and that plate‐shaped Ge islands with (811) facets are grown early in the growth, but that the predominant facet changes to {311} and the (100) planes with further growth. These growth processes are similar to those of Ge films on (100)Si surfaces reported previously. It is concluded that Ge islands with {811} facets are energetically stable in the initial stage of the island growth on the (811)Si surfaces as well as on the (100)Si surfaces.
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