Critical resolved shear stress measurements for silicon‐doped GaAs single crystals
作者:
E. D. Bourret,
M. G. Tabache,
A. G. Elliot,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 19
页码: 1373-1375
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.97860
出版商: AIP
数据来源: AIP
摘要:
The critical resolved shear stress of GaAs single crystals doped with silicon was directly measured using dynamical compression tests at high temperatures. At the melting point the critical resolved shear stress is 0.032 and 0.027 kg/mm2for crystals doped with 1.5×1018and 3×1018cm−3silicon, respectively. These values are lower than that for undoped GaAs. This reinforces our earlier conclusion that solid solution hardening and the reduction of crystallographic glide is not the only mechanism by which dopants reduce the formation of dislocations during the growth of single crystals from the melt.
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