Band structure of materials suitable for production of pico and subpicosecond optoacoustic pulses
作者:
A. N. Dharamsi,
A. B. Hassam,
期刊:
The Journal of the Acoustical Society of America
(AIP Available online 1991)
卷期:
Volume 90,
issue 2
页码: 1186-1187
ISSN:0001-4966
年代: 1991
DOI:10.1121/1.402025
出版商: Acoustical Society of America
关键词: BAND STRUCTURE;PHOTOELASTICITY;PHOTOACOUSTIC EFFECT;PS RANGE;THERMALIZATION;LASER RADIATION;SEMICONDUCTOR MATERIALS;LAYERED MATERIALS
数据来源: AIP
摘要:
A previous discussion [J. Acoust. Soc. Am.85, 1560–1568 (1989)] on the energy band structure of target materials, suitable for generation of ultrashort optoacoustic pulses by photostriction, is extended and formalized. Details of the band structure necessary to suppress thermalization by holes are included. It is pointed out that the material should exhibit suitable gaps between valence bandsinadditiontohaving suitable gaps between conduction bands. The conditions that must be satisfied in order to prevent thermalization by electronsaswellasholes, a key feature necessary in the production of ultrashort pulses, are formalized. Some examples of materials approaching an ‘‘ideal’’ band structure are given.
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