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Donor bound‐exciton structure observed by photoluminescence in very thin GaAs/In0.11Ga0.89As/GaAs single quantum wells

 

作者: P. B. Kirby,   J. A. Constable,   R. S. Smith,  

 

期刊: Journal of Applied Physics  （AIP Available online 1991）
卷期: Volume 69, issue 1  

页码: 517-518

 

ISSN:0021-8979

 

年代: 1991

 

DOI:10.1063/1.347697

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Extremely narrow photoluminescence linewidths have been observed from 6‐A˚ quantum wells of GaAs/In0.11Ga0.89As/GaAs. The quality of these spectra is such that structure involving higher‐order donor‐exciton transitions are observed.

 

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