The dynamic behavior of a novel fast fuse opening switch has been analyzed theoretically. The outer cylinder of a resistive substrate, e.g., SiC, is uniformly coated with a thin film (∼10 &mgr;m) of aluminum fuse. The substrate provides mechanical stability and guards against voltage breakdown. The key aspects of the modeling are as follows: (1) time‐dependent ordinary differential equations for the fuse‐intensive variables which include coupling to circuit waveforms; (2) spatial dependence within the fuse is suppressed by assuming uniform expansion (linear velocity profile). Intimate contact between the fuse and substrate layer induces an additional inductive load voltage which the fuse must support due to the skin effect inside the substrate. The resulting overvoltage is not severe enough to cause fuse restrike before switching has completed. The fuse opening times are quite short (∼20–50 ns) and the voltage multiplication factors are high (∼10–30). These results raise the hope that a single‐stage fuse could ultimately be used in an inductive storage device intended for high‐current, high‐power pulsed diode applications.