Expression for the growth rate of selective epitaxial growth of silicon using dichlorosilane, hydrogen chloride, and hydrogen in a low pressure chemical vapor deposition pancake reactor
作者:
Poonacha Kongetira,
Gerold W. Neudeck,
Christos G. Takoudis,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1997)
卷期:
Volume 15,
issue 6
页码: 1902-1907
ISSN:1071-1023
年代: 1997
DOI:10.1116/1.589576
出版商: American Vacuum Society
关键词: Si
数据来源: AIP
摘要:
A semiempirical expression was developed for the growth rate of selective epitaxial growth (SEG) and epitaxial lateral overgrowth of silicon in a rf heated cold-wall low pressure chemical vapor deposition pancake reactor for the dichlorosilane-HCl–H2system. The model was obtained for temperatures ranging from 920 to 1020 °C, system pressures from 40 to 150 Torr, and over a range of HCl and dichlorosilane gas flows. The growth rate expression is the sum of a growth term which is a function of the partial pressures of dichlorosilane(SiCl2H2)and hydrogen, and an etch term that varies with the partial pressure of HCl. The growth and etch terms have a temperature Arrhenius relation with activation energies ofEgr=2.266andEet=1.349 eV,respectively. Included is a term to account for the SEG growth rate dependence on the ratio ofSiO2area coverage to silicon wafer area. A methodology was developed for obtaining the coefficients for the semiempirical growth rate expression from several sets of experiments.
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