首页   按字顺浏览 期刊浏览 卷期浏览 Measurements of local strain variation in Si1−xGex/Si heterostructures
Measurements of local strain variation in Si1−xGex/Si heterostructures

 

作者: L. D. Bell,   W. J. Kaiser,   S. J. Manion,   A. M. Milliken,   W. T. Pike,   R. W. Fathauer,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1995）
卷期: Volume 13, issue 4  

页码: 1602-1607

 

ISSN:1071-1023

 

年代: 1995

 

DOI:10.1116/1.587864

 

出版商: American Vacuum Society

 

关键词: HETEROSTRUCTURES;SILICON;GERMANIUM SILICIDES;MOLECULAR BEAM EPITAXY;INTERNAL STRAINS;CONDUCTION BANDS;ENERGY−LEVEL SPLITTING;INTERFACE STRUCTURE;ROUGHNESS;ELECTRON EMISSION;Si;(Si,Ge)

 

数据来源: AIP

 

摘要:

The energy splitting of the conduction‐band minimum of Si1−xGexdue to strain has been directly measured by the application of ballistic‐electron‐emission microscope (BEEM) spectroscopy to Ag/Si1−xGexstructures. Experimental values for this conduction‐band splitting agree well with calculations. For Au/Si1−xGex, however, heterogeneity in the strain of the Si1−xGexlayer is introduced by deposition of the Au. This variation is attributed to species interdiffusion, which produces a rough Si1−xGexsurface. Preliminary modeling indicates that the observed roughness is consistent with the strain variation measured by BEEM.

 

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