Electron spin resonance study of hydrogenation effects in polycrystalline silicon
作者:
Dominique Ballutaud,
Marc Aucouturier,
Florence Babonneau,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 49,
issue 23
页码: 1620-1622
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.97247
出版商: AIP
数据来源: AIP
摘要:
Electron spin resonance spectra obtained on polycrystalline silicon produced by annealing of chemical vapor deposition silicon are investigated before and after plasma hydrogenation of the material. Before hydrogenation, two paramagnetic defects are observed, one of them remaining unidentified (g=2.0084). Hydrogenation decreases the total spin density, but the two defects are affected differently; the defect withg=2.0084 is more efficiently passivated. The results are discussed in terms of the inter‐ and intragranular nature of the paramagnetic defects and of hydrogen diffusivity in the polycrystal.
点击下载:
PDF
(261KB)
返 回