Thermally activated interface shift in the tungsten/silicon multilayers
作者:
M. Jergel,
Z. Bochni´cˇek,
E. Majkova´,
R. Sendera´k,
Sˇ. Luby,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 7
页码: 919-921
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.116943
出版商: AIP
数据来源: AIP
摘要:
Theinsitux‐ray reflectivity measurements during linear and isothermal annealings of a W/Si multilayer (ML) were performed, and successive disappearance and reappearance of the second and third ML Bragg maxima between 400 and 500 °C were observed. Such behavior is direct evidence of a long‐range interface shift, and was found to be connected with a substantial decrease of the electronic density of the expanding originally W layers and the ML period. Surprisingly, the changes take place without smearing‐out the interfaces. The results are explained by the Si diffusion into the W layers. ©1996 American Institute of Physics.
点击下载:
PDF
(56KB)
返 回