The floating crucible method for growing single crystals is described. This method, a simple modification of the Czochralski technique, permits the growing of large germanium single crystals of uniform resistivity. By growing the crystal from an inner crucible floating in the germanium melt, the condition of constant liquid volume in the inner crucible is achieved and the concentration gradient characteristic of crystals grown by the Czochralski method is elminated. Earlier determinations of the distribution coefficients of some doping impurities in germanium have been verified. The density of liquid germanium at the melting point has been determined to be 5.94±0.06 g/cm3. The use of the floating crucible technique for the growing of uniform silicon crystals is discussed.