The doping profile in semiconductors can be extracted very accurately fromC–Vmeasurements using the inverse modeling approach. This method requires very extensive numerical calculations which makes its practical implementation very difficult for process characterization purposes. To minimize the execution time of this technique a dynamic mesh algorithm has been developed. Using this algorithm the decrease in the calculation time of the doping profile parameters of over one order of the magnitude was obtained. The improved computational method was verified using simulation examples and experimental results for ion implanted metal–oxide semiconductor capacitors.