We investigated the behavior of vertically stacked tunnel junctions in a circuit suitable for voltage standards. Such three‐dimensional (3D) circuits might offer a considerable reduction of chip size when compared with conventional, two‐dimensional circuits. Up to 84 series connected stacks with four junctions in a stack were incorporated into a microstripline. In the current‐voltage characteristic, we measured quantized current steps until 100 mV upon applying microwave irradiation in theWband. We observed both chaotic and nonchaotic behavior. Whether chaos or nonchaotic behavior is observed under microwave radiation depends on the coupling strength which is defined by the intermediate niobium layer thickness between the junctions of a stack. Large thickness corresponds to weak coupling and absence of chaos. We showed that 3D circuits are promising for voltage standard application. ©1995 American Institute of Physics.