Si/SiGequantum wells grown on vicinalSi(001)substrates: Morphology, dislocation dynamics, and transport properties
作者:
P. Waltereit,
J. M. Ferna´ndez,
S. Kaya,
T. J. Thornton,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 18
页码: 2262-2264
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121272
出版商: AIP
数据来源: AIP
摘要:
Compositionally graded, strain relaxedSi0.72Ge0.28buffers were grown on vicinalSi(001)substrates by gas source molecular beam epitaxy. Misfit dislocations are shown to run along intersections of the {111} glide planes with the(11n)interface. X-ray diffraction studies demonstrate a relative tilt of the epilayer to the substrate in a direction which depends on the interplay between substrate orientation related preferential dislocation nucleation rates and surface contamination induced heterogeneous nucleation. Atomic force microscopy (AFM) images reveal an anisotropy in surface roughness on the &mgr;m scale related to reduced growth rates on vicinal surfaces. Transport properties at 0.4 K in two dimensional electron gases grown on these relaxed SiGe buffers show anisotropic scattering times similar to interface roughness scattering which can be correlated to terrace configurations in the nm range determined by AFM. ©1998 American Institute of Physics.
点击下载:
PDF
(292KB)
返 回