Hydrogenated amorphous silicon-carbon thin-films (a-SixCy: H) were prepared so as to obtain sets of films with different thicknesses for each of two differing growth conditions. Double Schottky barrier electrodes were used to study the space-charge-limited current (SCLC) through each film and the scaling law for this conduction mechanism was tested for each of the two preparative conditions. This scaling law was valid only if the deposition was uninterrupted during movement of a mask which was rotated so as to cover sequentially parts of the substrate. Films which were deposited in several layers, with brief interruptions for mask movement, appear to have additional states at each interface which dominate the bulk states being intentionally probed by the SCLC technique.