Growth of vertical-cavity surface-emitting laser structures on GaAs (311)B substrates by metalorganic chemical vapor deposition
作者:
K. Tateno,
Y. Ohiso,
C. Amano,
A. Wakatsuki,
T. Kurokawa,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 25
页码: 3395-3397
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119182
出版商: AIP
数据来源: AIP
摘要:
Vertical-cavity surface-emitting laser (VCSEL) structures have been grown on GaAs (311)B substrates by metalorganic chemical vapor deposition. C-doped GaAs and AlAs layers with smooth surface morphology and a hole concentration of1018 cm−3were obtained by optimizing the growth conditions; these conditions contributed to high-qualityp-type distributed Bragg reflectors (DBRs). The devices on the (311)B substrates exhibited a threshold current of 9.6 mA, voltage of 2.1 V, and maximum power of 4.1 mW at a 20 &mgr;m &fgr; size; these characteristics are similar to those obtained on (100) substrates. The polarization was aligned to [2¯33¯]. ©1997 American Institute of Physics.
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