High‐quality InAlAs grown by organometallic vapor phase epitaxy
作者:
Leye Aina,
Mike Mattingly,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 51,
issue 20
页码: 1637-1639
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.98580
出版商: AIP
数据来源: AIP
摘要:
High‐quality InAlAs with excellent photoluminescence and low electron concentrations has been grown by organometallic vapor phase epitaxy (OMVPE). For InAlAs lattice matched to InP, electron concentrations as low as 7×1015cm−3and mobilities as high as 4472 cm2/V s at 300 K have been achieved. These values are comparable to results measured on material grown by liquid phase epitaxy and molecular beam epitaxy and exceed results for previously published OMVPE grown material. The variation of the structural, optical, and electrical properties of the InAlAs with lattice mismatch is reported.
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