The complete solid‐phase epitaxial regrowth of ion‐implanted layers in GaAs was obtained during a short (10 min) capless furnace anneal at a temperature of 475 °C. Two factors believed responsible for the incomplete regrowth of layers have been identified. First, the damage density from the implant should not exceed a critical value determined by a Boltzmann calculation. Second, the growth of polycrystalline material from the surface observed by transmission electron microscopy is a competitive mechanism. As+implants, whose doses and energies were selected to achieve the correct damage density, and to ensure that its value was maintained in the near‐surface region, led to a complete recrystallization.