Bi-layered ferroelectricSrBi2Ta2O9(SBT) films were successfully prepared onPt/SiO2/SiandPt/Ti/SiO2/Sisubstrates at 550 °C by plasma-enhanced metalorganic chemical vapor deposition. A BTO (Bi4Ti3O12orBi2Ti4O11) phase formed at the interface between SBT films andPt/Ti/SiO2/Siduring the SBT deposition at 550 °C. The BTO phase decreased the leakage current density of the SBT films. The leakage current densities of SBT films deposited onPt/Ti/SiO2/SiandPt/SiO2/Sisubstrates were about5.0×10−8and5.0×10−7 A/cm2at an applied field of 300 kV/cm, respectively. The SBT films were controlled by Schottky emission. The Schottky barrier heights of SBT films deposited onPt/Ti/SiO2/SiandPt/SiO2/Siwere about 1.2 and 0.8 eV, respectively. ©1998 American Institute of Physics.