Improvement of depth resolution in secondary ion mass spectrometry depth profiling of silicided poly contacts
作者:
Sean F. Corcoran,
Dave Soza,
Nancy Kincaid,
Don Danielson,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1994)
卷期:
Volume 12,
issue 1
页码: 230-233
ISSN:1071-1023
年代: 1994
DOI:10.1116/1.587145
出版商: American Vacuum Society
关键词: SIMS;SPATIAL RESOLUTION;SILICON;INORGANIC POLYMERS;DEPTH PROFILES;DOPING PROFILES;POLISHING;ROUGHNESS;SILICIDES;SOLID−SOLID INTERFACES;Si
数据来源: AIP
摘要:
Performing secondary ion mass spectrometry (SIMS) depth profiles with high depth resolution,<10 nm, through silicided polysilicon contacts is made difficult by the inherent roughness of the silicide/poly interface. This interface roughness results in a loss in depth resolution and leads to the subsequent broadening of the dopant profile under the silicide. In some instances, where the junction is less than 100 nm, it is not possible to obtain an accurate and reliable depth profile of the dopant in the poly or the substrate Si. In this article, the practical application of polishing techniques for planarization and subsequent high depth resolution SIMS analyses are presented. This article will focus on the application of this technique to silicided poly contacts over diffusion areas.
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